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    表面粗糙度对WS2/Pt肖特基结光响应性能的影响

    Influence of Surface Roughness on the Photoresponse of WS2/Pt Schottky Junction

    • 摘要: 对通过化学气相沉积法生长、Pt纳米颗粒(Pt Nanoparticles,Pt NPs)修饰的多层WS2的表面粗糙度进行了0~4 min不同时长的紫外臭氧处理。当处理时长为2 min时,WS2的表面粗糙度(Sa)达到最大值,约为14 nm,这种现象主要归因于紫外臭氧对WS2表面的氧化形成了非晶态的WOx。随着处理时长延长,多层WS2下层的新鲜WS2暴露,氧化效应得到缓解。实验表明,经2 min紫外臭氧处理后的WS2/Pt肖特基结在400~900 nm范围内展现出优异的光响应性能,特别是在近红外波段750 nm处,其响应度高达18 A/W,相比未处理的WS2/Pt肖特基结的响应度提高了约60%,这主要归因于紫外臭氧处理使得WS2/Pt肖特基结中WS2表面粗糙化,粗糙度的增加增强了光激发而产生的电子-空穴对的分离,同时还增加了从Pt到WS2的热电子注入。

       

      Abstract: The surface roughness of multilayer WS2 grown by chemical vapor deposition and modified with platinum nanoparticles (Pt NPs) was tuned by ultraviolet ozone treatment with the durations ranging from 0 to 4 min. The surface roughness (Sa) reached a maximum value of approximately 14 nm when the treatment time was 2 min, primarily attributed to the formation of amorphous WOx due to the oxidation of the WS2 surface by ultraviolet ozone. As the treatment duration was extended, the underlying fresh layers of multilayer WS2 were exposed, mitigating the aforementioned oxidation effect. Characterization results demonstrated that the WS2/Pt Schottky junction treated with ultraviolet ozone for 2 min exhibited superior photoresponse performance in the wavelength range of 400—900 nm, particularly at 750 nm in the near-infrared region, with a responsivity as high as 18 A/W, representing a nearly 60% improvement compared to the untreated WS2/Pt Schottky junction. This enhanced performance can be primarily attributed to the increased surface roughness of the WS2 in the WS2/Pt Schottky junction induced by ultraviolet ozone treatment. The increased roughness not only facilitated the separation of photo-generated electron-hole pairs but also enhanced the hot electron injection from Pt to WS2.

       

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