Microwave Dielectric Properties of Low Temperature Sintered Al2O3 Ceramics
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摘要: 考察了复合添加剂0.4%CuO−0.5%TiO2−0.1%Nb2O5（质量分数，下同）掺杂Al2O3陶瓷材料的显微结构和微波介电性能。结果表明，添加量为1%的0.4%CuO−0.5%TiO2−0.1%Nb2O5复合添加剂有效地降低了Al2O3陶瓷烧结温度；1150 ℃烧结的样品显微结构均匀且相对密度可以达到96%；随着烧结温度升高材料密度也随之增大，但是出现了晶粒异常长大现象且产生的杂相物质随着烧结温度的升高会聚集。与此同时，这种低温烧结的Al2O3陶瓷材料具有较高的Q×f值，在1150 ℃下烧结样品得到最大Q×f值为64632 GHz。讨论了低温下致密化的原因，以及异常的晶粒长大行为和微波介电性能的变化趋势。Abstract: With the rapid development of information and communication technology, microwave dielectric materials have also developed correspondingly. Al2O3 ceramics are widely used in resonators, ceramic substrates, and satellite communication devices due to their excellent microwave dielectric properties. However, the sintering temperature of Al2O3 ceramics is relatively high. Considering environmental protection, energy saving and emission reduction, low-temperature sintering of Al2O3 ceramics is also an important aspect which people pay attention to. Doping additives is a method that has been studied more and has a significant effect on reducing the sintering temperature of Al2O3 ceramics. Recently, CuO-TiO2-Nb2O5 doping has attracted the attention of people because of its outstanding cooling effect. Although some reports show that it can effectively reduce the sintering temperature, Q×f value is low. The sintering behavior, microstructure and microwave dielectric properties of Al2O3 ceramics doped with 0.4%CuO−0.5%TiO2−0.1%Nb2O5 have been investigated. The results show that 0.4%CuO+0.5%TiO2+0.1%Nb2O5 which (mass fraction 1%) reduces the sintering temperature of Al2O3 ceramics effectively. Samples with relative densities of ≥96% and uniform microstructure could be obtained when sintered at 1150 ℃. Higher temperature could further increase the density of the sample, but it inevitably led to abnormal grain growth. Meanwhile, the investigation results show that the low-firing Al2O3 ceramics have good microwave dielectric properties especially high Q×f value. A high Q×f value of 64632 GHz could be obtained for the 1150 ℃ sintered sample. The reason for the low temperature densification, abnormal grain growth behavior and the changing trend of the microwave dielectric properties are discussed in the paper.
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Key words:
- Al2O3 /
- Low temperature sintering /
- Microstructure /
- Q×f value
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图 4 未掺杂Al2O3陶瓷样品和0.4%CuO+0.5%TiO2+0.1%Nb2O5共掺Al2O3陶瓷样品在不同温度下烧结的密度曲线
Figure 4. Density curve of undoped Al2O3 samples and 0.4%CuO+0.5%TiO2+0.1%Nb2O5 co-doped Al2O3 samples sintered at different temperatures
图 5 0.4%CuO+0.5%TiO2+0.1%Nb2O5共掺Al2O3陶瓷样品在不同温度下烧结的XRD衍射图
Figure 5. XRD diffraction patterns of the 0.4%CuO+0.5%TiO2+0.1%Nb2O5 co-doped Al2O3 samples sintered at different temperatures
图 6 未掺杂Al2O3陶瓷样品在1250 ℃下烧结的SEM图
Figure 6. SEM images of undoped Al2O3 samples sintered at 1250 ℃
图 7 0.4%CuO+0.5%TiO2+0.1%Nb2O5共掺Al2O3陶瓷样品在不同温度下烧结的SEM图
Figure 7. SEM images of the 0.4%CuO+0.5%TiO2+0.1%Nb2O5共掺Al2O3 co-doped Al2O3 samples sintered at different temperatures
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