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    (MgxZn1-x)2SiO4 System Microwave Dielectric Ceramics[J]. Journal of East China University of Science and Technology, 2010, (3): 384-388.
    Citation: (MgxZn1-x)2SiO4 System Microwave Dielectric Ceramics[J]. Journal of East China University of Science and Technology, 2010, (3): 384-388.

    (MgxZn1-x)2SiO4 System Microwave Dielectric Ceramics

    • The Mg2SiO4type microwave ceramics in (MgxZn1-x)2SiO4 system were prepared. The experimental results indicate that the sintering temperature of (MgxZn1-x)2SiO4 system was reduced with the replacement between Mg2+ and Zn2+. And with the increasing of x value, the major crystalline phases were transformed from single willemite to coexisting willemite and forsterite, and finally single forsterite. Among all samples, (Mg0.7Zn0.3)2SiO4 exhibited the best properties of sintering temperature(1 400 ℃), dielectric constant (εγ=6.75) and dielectric loss (tan σ=1.86×10-3).
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