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    韩蕊, 李蔚, 汪霖, 严嵩. Nb2O5掺杂对SrTiO3陶瓷显微结构和微波介电损耗的影响[J]. 华东理工大学学报(自然科学版), 2017, (6): 800-805. DOI: 10.14135/j.cnki.1006-3080.2017.06.008
    引用本文: 韩蕊, 李蔚, 汪霖, 严嵩. Nb2O5掺杂对SrTiO3陶瓷显微结构和微波介电损耗的影响[J]. 华东理工大学学报(自然科学版), 2017, (6): 800-805. DOI: 10.14135/j.cnki.1006-3080.2017.06.008
    HAN Rui, LI Wei, WANG Lin, YAN Song. Effect of Nb2O5 Doping on Microstructures and Microwave Dielectric Loss of SrTiO3 Ceramics[J]. Journal of East China University of Science and Technology, 2017, (6): 800-805. DOI: 10.14135/j.cnki.1006-3080.2017.06.008
    Citation: HAN Rui, LI Wei, WANG Lin, YAN Song. Effect of Nb2O5 Doping on Microstructures and Microwave Dielectric Loss of SrTiO3 Ceramics[J]. Journal of East China University of Science and Technology, 2017, (6): 800-805. DOI: 10.14135/j.cnki.1006-3080.2017.06.008

    Nb2O5掺杂对SrTiO3陶瓷显微结构和微波介电损耗的影响

    Effect of Nb2O5 Doping on Microstructures and Microwave Dielectric Loss of SrTiO3 Ceramics

    • 摘要: 采用无压烧结工艺制备了Nb2O5掺杂SrTiO3陶瓷,研究了Nb2O5掺杂量对SrTiO3陶瓷相组成、显微结构和微波介电损耗的影响。结果表明:Nb2O5掺杂对SrTiO3陶瓷的相结构没有产生明显的影响,但会在一定程度上阻碍样品的致密化,同时促进晶粒的生长。随着Nb2O5掺杂量的增加,SrTiO3陶瓷的介电常数从296逐渐下降至230左右,温度系数从1.714×10-3-1逐渐下降至1.629×10-3-1Q×f值则先急剧升高,之后又慢慢下降。当Nb2O5掺杂量为0.15%(质量分数,下同)时,SrTiO3陶瓷样品的介电损耗最低,Q×f可达6 281 GHz,大约是纯SrTiO3(1 145 GHz)陶瓷样品的5.5倍(此时介电常数约为270,温度系数约为1.684×10-3-1)。此外,对材料显微结构、介电常数、温度系数特别是介电损耗变化的原因进行了分析。

       

      Abstract: Nb-doped SrTiO3 ceramics were prepared via sintering without extra pressure.Effects of Nb2O5 contents on the phase composition,microstructures and microwave dielectric loss of SrTiO3 ceramics were investigated.Results showed that Nb2O5 doping has no evident impact on phase composition but hinders the densification and promotes the grain growth of samples to some extent.Upon increasing the amount of Nb2O5 doping,the permittivity (εr) of SrTiO3 ceramics decreased from 296 to 230 and the temperature coefficient reduced from 1.714×10-3 to 1.629×10-3-1 gradually,while the Q×f value increased sharply at first and then decreases slowly.When 0.15% (mass fraction) Nb2O5 were doped,the dielectric loss of SrTiO3 ceramics was the lowest,and the Q×f reached 6 281 GHz (the dielectric constant was about 270 and the temperature coefficient 1.684×10-3-1),which is about 5.5 times as high as that of the un-doped samples (1 145 GHz). The reasons for the changes of microstructures,dielectric constants,temperature coefficients especially the dielectric loss were also discussed.

       

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