图共 4个 表共 0
    • 图  1  石墨烯生长条件曲线(a),未经过电化学抛光(b)和经过电化学抛光(c)的铜箔的AFM形貌图

      Figure 1.  Graphene growth condition curve (a), AFM topography of copper foil without electrochemical polishing (b) and with electrochemical polishing (c).

    • 图  2  形核阶段前不通氧气(a)和生长阶段前不通氧气(b)所制备的铜基石墨烯光学照片(生长阶段为CH4∶H2=7.5∶100),生长阶段为CH4∶H2=5∶100 (c), 7.5∶100 (d), 10∶100 (e)的石墨烯光学照片(形核和生长前均通入氧气),生长条件为CH4∶H2=7.5∶100的石墨烯转移到硅片后的光学照片(f)和SEM(h)照片,(g)生长条件为CH4∶H2=7.5∶100的石墨烯在铜上的SEM照片。

      Figure 2.  Optical pictures of graphene (growth stage CH4∶H2=7.5∶100) prepared without oxygen before nucleation (a) and growth (b), Optical pictures of graphene on copper with CH4∶H2=5∶100(c), 7.5∶100 (d) and 10∶100 (e) with oxygen before both nucleation and growth), Optical picture (f) and SEM image (h) of graphene on silicon wafers (growth stage CH4∶H2=7.5∶100), SEM image (g) of graphene on copper(growth stage CH4∶H2=7.5∶100).

    • 图  3  最佳制备条件下得到的石墨烯的TEM照片(a)和SAED衍射花样照片(b),不同条件下生长的石墨烯的拉曼谱(c),最佳条件下生长的石墨烯薄膜拉曼面扫I2D/IG(d)和ID/IG图(e)。

      Figure 3.  TEM photograph (a) and SAED diffraction pattern (b) of graphene grown under optimal condition, Raman spectra of graphene grown under different conditions (c), Raman mapping analysis of I2D/IG (d) and ID/IG (e) of the graphene grown under optimal condition.

    • 图  4  石墨烯FET图片(a)和其光学照片(b),FET转移特性曲线(c),FET输出特性曲线(d)。

      Figure 4.  Graphene FET image (a) and the optical picture (b), FET transfer characteristic curve (c), FET output characteristic curve (d).