Abstract: The copper deposition in CuI-Cu_2O-P_2O_5-PbI_2 glass has been investigated by EPMA and the counting rate curve was given. Measurement performed on the sample showed that the copper content at the point bombarded by the electron beam first increased with the time of bombardment, then increased slowly and at last attained its saturation limit. The component image at the depesition point and the CuKa X-ray scanning image at the surface of the sample were given. It was found that the regularity of copper deposition was similar to that of silver deposition. The copper ions in the sample may be considered as of two types. The ions of one type are surrounded by iodine ions, and that of the other type are tied to the corners of the PO_4~(3-) tetrahedrons with strong partial covalency. It is only the ions of the first type make a contribution to conduction and move in the sample.