Abstract: The numerical model of NChannel IGBT is analysed and simulated by PSpice. This numerical model can reflect the characteristic of MOSFET and PNP bipolar transistor. Most of the existing simulation means are complex, and the temperature characteristic is ignored. In this paper, a novel modeling method of IGBT is proposed by considering measurement and data sheet values. According to the parameters of IGBT for the type of FGW50N60HD, its IGBT model is established, which is further tested by the experiment in threelevel inverter. Moreover, the internal parameters of IGBT model are easily modified according to the change of the outside temperature surroundings. Finally, the simulation and experimental results demonstrate the validities of the model in different temperature conditions.