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    姜海波, 李春忠, 等. 氯化钛白氧化反应器壁结疤机理[J]. 华东理工大学学报(自然科学版), 2001, (2): 152-156.
    引用本文: 姜海波, 李春忠, 等. 氯化钛白氧化反应器壁结疤机理[J]. 华东理工大学学报(自然科学版), 2001, (2): 152-156.
    Sacling Mechanism on the Oxidation Reactor Wall in TiO_2 Synthesis with Chloride Process[J]. Journal of East China University of Science and Technology, 2001, (2): 152-156.
    Citation: Sacling Mechanism on the Oxidation Reactor Wall in TiO_2 Synthesis with Chloride Process[J]. Journal of East China University of Science and Technology, 2001, (2): 152-156.

    氯化钛白氧化反应器壁结疤机理

    Sacling Mechanism on the Oxidation Reactor Wall in TiO_2 Synthesis with Chloride Process

    • 摘要: 利用预燃烧直管反应器,研究氯化钛白氧化反应器内的结疤机理。氧化反应器内结疤支要起因子氧化过程生成的超细TiO2颗粒在反应器壁的沉积和烧结,反应器壁面温度越高结疤速率越快。当反应器壁面温度较低时,靠近壁面为TiO2颗粒堆结层,而告气体相主体的疤层发生了部分烧结。反应温度升高、反应物浓度增大时,结疤速度增大;壁面状态对结疤速率影响不大。

       

      Abstract: The scaling mechanism on the tubular reactor wall in TiO 2 synthesis was investigated. The formation of wall scale is mostly due to the deposition and the sintering of TiO 2 particle formed in the gas phase reaction of TiCl 4 with O 2. The higher the temperature of the reactor wall is, the faster scaling rate is. At low wall temperature, the particle packed layer is formed by powder deposition, and the scale is partly sintered at higher temperature. The formation rate increases with increasing the reaction temperature and the reactant concentration, but is affected little by the surface status of the reactor.

       

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