Abstract:
Silicon-containing arylacetylene resin(PSA) has been widely used in aerospace and electronic information field, because of it’s excellent process performance, high temperature resistance and dielectric properties. However, the dielectric constant of PSA resin still cannot meet the use of the very large scale integration (VLSI). Fluorine-containing silicon arylacetylene resins(PSAFs), which offered high temperature resistance and low dielectric constant, were synthesized through the reaction between long chain fluoroalkyltrichlorosilane and phenyldiethynylmagnesium bromide, and their structures were characterized using FT-IR,
1H- NMR and
19F-NMR. The rheological properties and cure behavior of the PSAFs resins were investigated by the rotational rheometer and DSC. The thermal stability and dielectric properties of the cured PSAFs resins were analyzed by thermogravimetric analysis and dielectric spectrometer. The results showed that the PSAFs resins had good processability, and the processing window was under the temperature ranging from 40 ℃ to 150 ℃. The incorporation of fluorine into silicon-containing arylacetylene resin improved the dielectric properties, and the dielectric constants of the cured PSAFs resins can tuned from 2.43 to 2.62, and the dielectric loss were varied from 0.003 0 to 0.005 8 under 1 MHz, respectively. Moreover, the dielectric constant was decreased with the increase in fluorine content, but the dielectric loss did not change significantly. The 5% weight loss temperature of the cured PSAF1 and PSAF2 resins under nitrogen atmosphere were 430 ℃ and 416 ℃, and the decomposition residue at 1 000 ℃ were 42.3% and 34.7%, respectively.