Abstract: Zinc oxide (ZnO) films were deposited on flexible PET substrates by intermediate frequency reaction magnetron sputtering method at room temperature.The effects of sputtering power and flow ratio of F (Ar/O₂) on the electrical properties of ZnO films were investigated,and the optimum sputtering power and F (Ar/O₂) was 20 W and 1:1,respectively.Laser irradiation was found to be more effective both for the modification of the surface morphology,crystal structure and for the improvement of the electrical properties of the as-grown flexible ZnO thin films.X-ray diffraction (XRD) and atomic force microscope (AFM) measurements showed that the as-grown films had a relative smooth and dense surface morphology and an amorphous structure.The irradiation treatment improves the crystalline quality of the flexible ZnO thin films through promoting the aggregation of the ZnO grains and enhancing the (100) and (101) orientation.A significant increase in the carrier concentration and a decrease in the resistivity of the films were observed after laser irradiation.