Abstract: A research method based on Raman spectroscopy was introduced to study anodic bonding stress.A self-developed miniaturized anodic bonding device coupled with the Raman spectrometer was used to monitor the stress evolution in the anodic bonding processes,including heating,charge process and cooling.In the heating process,the position of Raman peak of silicon moved towards lower wave number,and the silicon oxidation in the real bonding process brought tensile stress in the silicon near the interface.In the cooling process,the stress state of silicon interface changed from tensile to compressive stress.Therefore,oxidation in the second period of anodic bonding had a significant influence on the stress state of the interface.